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Réalisation par épitaxie en phase liquide de photopiles performantes AlGaAs/GaAs à base de substrat polycristallin = Hight efficiency liquid phase epitaxy grown AlGaAs/GaAs solar cells using polycrystalline substratesSoumana, Hamadou; Laugier, A.1992, 166 p.Thesis

Etude des propriétés électro-optiques des impuretés Vanadium et Nickel dans GaAsHizem, Neila; Guillot, Gérard.1989, 143 p.Thesis

The InAs1-xPx (Bi) / InAs thermo - PV and InSb1-xAsx (Bi) / InSb PV - structures growth by liquid - sources version of liquid - phase electroepitaxyGAMBARYAN, K. M; GEVORKYAN, V. A; AROUTIOUNIAN, V. M et al.World renewable energy congress. 2000, pp 1990-1992, isbn 0-080-43865-2, 4VolConference Paper

Low bandgap GaInAsSbP pentanary thermophotovoltaic diodesCHEETHAM, K. J; CARRINGTON, P. J; COOK, N. B et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 534-537, issn 0927-0248, 4 p.Article

Research on Phase Detection on Two-Dimensional Position Sensitive DetectorFENG XI; LAN QIN; LIAN XUE et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7658, issn 0277-786X, isbn 978-0-8194-8088-0, 76581D.1-76581D.5, 2Conference Paper

Mono-crystalline Silicon Strips Grown by Liquid Phase Epitaxy for Photovoltaic ApplicationsBO LI; KITAI, Adrian H.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7750, issn 0277-786X, isbn 978-0-8194-8241-9, 77502N.1-77502N.7Conference Paper

Dislocation cell structures in CdZnTe substrates and its behavior of threading into HgCdTe LPE epilayersCUI XIAOPAN; FANG WEIZHENG; WEI YANFENG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8193, issn 0277-786X, isbn 978-0-8194-8834-3, 819311.1-819311.6, 2Conference Paper

The progress of ultrahigh density near-field optical storage pre-investigatedSHI PAN; TAO ZHANG; SHUO WANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6827, pp 682717.1-682717.5, issn 0277-786X, isbn 978-0-8194-7002-7 0-8194-7002-3, 1VolConference Paper

Silica film deposited by liquid phase deposition methodSAKAI, Yasuto.Hyomen gijutsu. 2001, Vol 52, Num 1, pp 100-101, issn 0915-1869Article

An optical micro-magnetic displayPARK, Jae-Hyuk; KIM, J. H; CHO, J. K et al.Journal of magnetism and magnetic materials. 2004, Vol 272-76, pp 2260-2262, issn 0304-8853, 3 p., 3Conference Paper

Recollections of MCT Work in the UK at Malvern and SouthamptonELLIOTT, Tom.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72982M.1-72982M.23, 2Conference Paper

Historical perspectives on HgCdTe material and device development at Raytheon Vision SystemsBRATT, P. R; JOHNSON, S. M; RHIGER, D. R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72982U.1-72982U.35, 2Conference Paper

Tunneling spectroscopy of YBa2Cu3O7-δ 45° asymmetrical bicrystals grown by liquid phase epitaxyELTSEV, Yu; NAKAO, K; YAMADA, Y et al.Physica. C. Superconductivity and its applications. 2002, Vol 367, Num 1-4, pp 24-27Article

Anomalous Hall Effect in Arsenic-doped HgCdTe Grown by Te-rich LPEQIU, Guang-Yin; ZHANG, Chuan-Jie; WEI, Yan-Feng et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8193, issn 0277-786X, isbn 978-0-8194-8834-3, 81932Z.1-81932Z.7, 2Conference Paper

Size control mechanism of RE123 LPE film on BaZrO3 buffered MgO substrate for PCS materialKAI, Masahiko; INOUE, Atsushi; HOSHI, Saburo et al.Nippon Kinzoku Gakkaishi (1952). 2003, Vol 67, Num 4, pp 153-156, issn 0021-4876, 4 p.Article

Liquid phase epitaxy processing for high temperature superconductor tapesOI, X; MACMANUS-DRISCOLL, J. L.Current opinion in solid state & materials science. 2001, Vol 5, Num 4, pp 291-300, issn 1359-0286Article

New concept technology : Pressure-variation liquid phase epitaxyMAO, Xiang-Jun; CHAN, Yuen-Chuen; LAM, Yee-Loy et al.SPIE proceedings series. 2000, pp 191-202, isbn 0-8194-3717-4Conference Paper

A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layersMISHURNYI, V. A; DE ANDA, F; GORBATCHEV, A. Yu et al.Journal of electronic materials. 1998, Vol 27, Num 8, pp 1003-1004, issn 0361-5235Article

Photoluminescence from InAs quantum wells grown by liquid-phase epitaxyKRIER, A; KRIER, S. E; LABADI, Z et al.Applied physics. A, Materials science & processing (Print). 2000, Vol 71, Num 3, pp 249-253, issn 0947-8396Article

Thermodynamic restrictions of LPE of bismuth-containing A3B5 solid solutionsKUZNETSOV, V. V; KOGNOVITSKAYA, E. A; RUBTSOV, E. R et al.Journal of non-crystalline solids. 2008, Vol 354, Num 35-39, pp 4375-4379, issn 0022-3093, 5 p.Conference Paper

Detailed studies on the origin of nitrogen-related electron traps in dilute GaAsN layers grown by liquid phase epitaxyDHAR, S; HALDER, N; MONDAL, A et al.Semiconductor science and technology. 2005, Vol 20, Num 12, pp 1168-1172, issn 0268-1242, 5 p.Article

Growth of silicon thin film by LPE on porous silicon bilayersOULD-ABBAS, A; BOUCHAOUR, M; CHABANE-SARI, N.-E et al.Journal of thermal analysis and calorimetry. 2004, Vol 76, Num 2, pp 685-691, issn 1388-6150, 7 p.Conference Paper

Control of the critical supercooling in LPEGORBATCHEV, A. Yu; MISHURNYI, V. A; DE ANDA, F et al.Journal of electronic materials. 2000, Vol 29, Num 12, pp 1402-1405, issn 0361-5235Article

Photoluminescences from AlxGa1-xP liquid phase epitaxial layersYU, T. J; MATSUO, T; SUTO, K et al.Journal of electronic materials. 1999, Vol 28, Num 10, pp 1101-1107, issn 0361-5235Article

Scanning capacitance microscopy investigations of buried heterostructure laser structuresBOWALLIUS, O; ANAND, S; HAMMAR, M et al.Applied surface science. 1999, Vol 144-45, pp 137-140, issn 0169-4332Conference Paper

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